RF-GaN PA Module

lNuvoton RF-GaN Power Amplifier (PA) Module is a fully integrated RF power amplifier module with driver amplifier, Doherty amplifier, and gate bias circuit for 5G NR massive MIMO and outdoor small cell applications.

Our fully integrated and high-efficiency PA module provides the highest level of integration into the radio system, accelerating time to market

Feature
Here’s the reformatted table with the right column content vertically centered:

Nuvoton_RF-GaN Power Amplifier Module for 5G radio unit_EN_1

-	Operating in NR band n77, n78 and n79
-	8W and 12.6 W Avg. Power
-	Driver and Doherty Amplifiers
-	50 Ω input and output matching
-	Bias circuit for GaN
-	12 x 8 mm Plastic surface mount package

Specifications
12.6W PA Module: KU0HH Series

P/N KU0HH36C KU0HH39C KU0HH48C

Band [GHz] 3.3 - 3.8 3.7 - 4.2 4.6 - 5.0

Psat [dBm] 49 49 49

Pave [dBm] 41 41 41

Gain [dB] 29 28 26

PAE [%] 48 47 45

Vds 28 V

Size 12.0 x 8.0 mm

System Block Diagram

Nuvoton_RF-GaN Power Amplifier Module for 5G radio unit_EN_3

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P/N	KU0HH36C	KU0HH39C	KU0HH48C
Band [GHz]	3.3 - 3.8	3.7 - 4.2	4.6 - 5.0
Psat [dBm]	49	49	49
Pave [dBm]	41	41	41
Gain [dB]	29	28	26
PAE [%]	48	47	45
Vds	28 V
Size	12.0 x 8.0 mm